Semiconductor devices configured to achieve a high withstand voltage are disclosed. In one example, a semiconductor device includes an SJ layer extending in a first direction and configured by alternately arraying semiconductor regions of a first conductivity type and semiconductor regions of a second conductivity type in a second direction orthogonal to the first direction. A first drain layer of the first conductivity type is electrically connected to the SJ layer on a first end side in the first direction, a channel layer of the second conductivity type is provided on the SJ layer on a second end side in the first direction, a first source layer of the first conductivity type is provided on the channel layer, and a first gate electrode is provided on a side of the channel layer and the first source layer in the first direction with a first insulating layer interposed therebetween.

A method for making a semiconductor device may include forming a first superlattice layer on a semiconductor substrate. The first superlattice layer may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a first device layer on the first superlattice layer and comprising silicon, forming a second device layer on the first superlattice layer laterally adjacent the first device layer, with the second device layer comprising a Group III-N semiconductor, forming a first device on the first device layer, and forming a second device on the second device layer.

A semiconductor device may include a semiconductor substrate and a superlattice layer on the semiconductor substrate. The superlattice layer may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may also include a piezoelectric layer on the superlattice layer and comprising a Group III-N semiconductor.

A method for making a semiconductor device may include forming a superlattice layer on a first substrate and including a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions. The method may further include forming a Group III-N semiconductor stack comprising a plurality of layers of Group III-N semiconductor layers above the superlattice layer, and separating the Group III-N semiconductor stack from the first substrate at the superlattice layer.

A method for making a semiconductor device may include forming a semiconductor substrate, and forming a superlattice layer on the semiconductor substrate and including a plurality of stacked groups of layers. Each group of layers may including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may also include forming a Group III-N semiconductor stack comprising a plurality of layers of Group III-N semiconductor layers above the superlattice layer.

A semiconductor device may include a semiconductor substrate and a first superlattice layer on the semiconductor substrate. The first superlattice layer may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include a first device layer on the first superlattice layer and comprising silicon, a second device layer on the first superlattice layer laterally adjacent the first device layer, with the second device layer comprising a Group III-N semiconductor, a first device on the first device layer, and a second device on the second device layer.

An SiC semiconductor device includes a first SiC layer, a second SiC layer laminated on the first SiC layer, a first impurity region of a p-type formed in the first SiC layer, a second impurity region of the p-type formed in the second SiC layer, first inversion columns of an n-type that are formed at an interval in the first SiC layer such as to invert a conductivity type of the first impurity region; and second inversion columns of the n-type that are formed at an interval in the second SiC layer such as to invert a conductivity type of the second impurity region.

A superjunction superlattice semiconductor device and a method of making the same are presented. In embodiments, the method includes: growing, on a substrate, alternating n-type and p-type semiconductor layers in the plane of the substrate, thereby forming a superjunction region providing a depletion effect; etching opposing sides of the superjunction region and the substrate to form spaced first and second sloped sidewalls, wherein each of the first and second sloped sidewalls extend at an oblique angle with respect to a top surface of the substrate; forming a first metal contact in communication with the first sidewall; and forming a second metal contact in communication with the second sidewall.