A semiconductor device assembly and associated methods are disclosed herein. The semiconductor device assembly includes (1) a substrate having a first side and a second side opposite the first side; (2) a first set of stacked semiconductor devices at the first side of the substrate; (3) a second set of stacked semiconductor devices adjacent to one side of the first set of stacked semiconductor devices; (4) a third set of stacked semiconductor devices adjacent to an opposite side of the first set of stacked semiconductor devices; and (5) a temperature adjusting component at the second side and aligned with the second set of stacked semiconductor devices. The temperature adjusting component is positioned to absorb the thermal energy and thereby thermally isolate the second set of stacked semiconductor devices from the first set of stacked semiconductor devices.

A memory device includes a first case, a second case coupled to the first case, a mid plate placed in an inner space between the first and second cases, a first memory module between the first case and the mid plate, including a first module substrate and at least one first electronic chip on the first module substrate, and a second memory module between the second case and the mid plate, including a second module substrate and at least one second electronic chip on the second module substrate, wherein the mid plate includes a base unit, a first rib structure extending from the base unit to electrically connect the mid plate to the first module substrate, and a second rib structure spaced apart from the first rib structure to electrically connect the mid plate to the first module substrate.