Disclosed is a method for crystallizing molecules having a molecular weight equal to or lower than about 500 Dalton in a gravity below about 0.01 g to about 0.000001 g as well as to crystalline molecules having a molecular weight equal to, or lower than, about 500 Dalton, prepared under microgravity conditions.

Disclosed is a method for crystallizing molecules having a molecular weight equal to or lower than about 500 Dalton in a gravity below about 0.01 g to about 0.000001 g as well as to crystalline molecules having a molecular weight equal to, or lower than, about 500 Dalton, prepared under microgravity conditions.

A manufacturing method of an epitaxial silicon wafer uses a silicon wafer containing phosphorus, having a resistivity of less than 1.0 m.Math.cm. The silicon wafer has a main surface to which a (100) plane is inclined and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 05 to 025 with respect to an axis orthogonal to the main surface. The manufacturing method includes: annealing the silicon wafer at a temperature from 1200 degrees C. to 1220 degrees C. for 30 minutes or more under argon gas atmosphere (argon-annealing step); etching a surface of the silicon wafer (prebaking step); and growing the epitaxial film at a growth temperature ranging from 1100 degrees C. to 1165 degrees C. on the surface of the silicon wafer (epitaxial film growth step).

A manufacturing method of an epitaxial silicon wafer uses a silicon wafer containing phosphorus, having a resistivity of less than 1.0 m.Math.cm. The silicon wafer has a main surface to which a (100) plane is inclined and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 05 to 025 with respect to an axis orthogonal to the main surface. The manufacturing method includes: annealing the silicon wafer at a temperature from 1200 degrees C. to 1220 degrees C. for 30 minutes or more under argon gas atmosphere (argon-annealing step); etching a surface of the silicon wafer (prebaking step); and growing the epitaxial film at a growth temperature ranging from 1100 degrees C. to 1165 degrees C. on the surface of the silicon wafer (epitaxial film growth step).

Methods and apparatus for synthesizing diamond from a carbon solution are provided. A carbon solution comprising dissolved carbon and liquid solvent is positioned in a levitation volume. Levitation is facilitated by performing the methods in micro-gravity. The levitation volume can have a dissolution zone and a diamond growth zone at different temperatures, or the temperature of the levitation volume can be adjusted between different periods. Apparatus are provided with one or more levitation generators which define a levitation volume and temperature control systems and devices. Diamond materials having sizes and properties suitable for a variety of applications are also provided.

Methods and apparatus for synthesizing diamond from a carbon solution are provided. A carbon solution comprising dissolved carbon and liquid solvent is positioned in a levitation volume. Levitation is facilitated by performing the methods in micro-gravity. The levitation volume can have a dissolution zone and a diamond growth zone at different temperatures, or the temperature of the levitation volume can be adjusted between different periods. Apparatus are provided with one or more levitation generators which define a levitation volume and temperature control systems and devices. Diamond materials having sizes and properties suitable for a variety of applications are also provided.

An electrostatic levitation crystal growth apparatus for a solution and a crystal growing method using the same. The apparatus may include an upper electrode, a lower electrode vertically spaced apart from the upper electrode, a power supply unit configured to apply a vertical electrostatic field between the upper electrode and the lower electrode, and a droplet dispenser configured to eject a solution into a region between the upper and lower electrodes and thereby to form a solution droplet. The solution droplet may be maintained in a charged state and may be electrostatically levitated against the gravity exerted thereon, by the vertical electrostatic field. The solution droplet may be evaporated in the electrostatically levitated state, and a solute dissolved in the solution may be grown to form a crystal.

An electrostatic levitation crystal growth apparatus for a solution and a crystal growing method using the same. The apparatus may include an upper electrode, a lower electrode vertically spaced apart from the upper electrode, a power supply unit configured to apply a vertical electrostatic field between the upper electrode and the lower electrode, and a droplet dispenser configured to eject a solution into a region between the upper and lower electrodes and thereby to form a solution droplet. The solution droplet may be maintained in a charged state and may be electrostatically levitated against the gravity exerted thereon, by the vertical electrostatic field. The solution droplet may be evaporated in the electrostatically levitated state, and a solute dissolved in the solution may be grown to form a crystal.

A crystal growth furnace includes securing member(s) configured to retain a crystal growth feedstock within a crystallization zone. Securing member(s) can include movable retaining arms configured to releasably hold the feedstock in a secured configuration in which a distal portion of the movable retaining arms abut an outer surface of the feedstock, and transitioned to a released configuration in which the movable retaining arms are moved away from the outer surface of the feedstock. Securing member(s) can 2024/206123 be inflatable and configured when in a deflated configuration to allow the feedstock to be disposed within the crystallization zone, transitioned to an inflated configuration in which an outer surface of the inflatable securing member(s) abut an outer surface of the feedstock, and transitioned back to the deflated configuration such that the outer surface of the inflatable securing member(s) are moved from the outer surface of the feedstock.

A crystal growth furnace includes securing member(s) configured to retain a crystal growth feedstock within a crystallization zone. Securing member(s) can include movable retaining arms configured to releasably hold the feedstock in a secured configuration in which a distal portion of the movable retaining arms abut an outer surface of the feedstock, and transitioned to a released configuration in which the movable retaining arms are moved away from the outer surface of the feedstock. Securing member(s) can 2024/206123 be inflatable and configured when in a deflated configuration to allow the feedstock to be disposed within the crystallization zone, transitioned to an inflated configuration in which an outer surface of the inflatable securing member(s) abut an outer surface of the feedstock, and transitioned back to the deflated configuration such that the outer surface of the inflatable securing member(s) are moved from the outer surface of the feedstock.