G
PHYSICS
G
PHYSICS
G11
INFORMATION STORAGE
G11
INFORMATION STORAGE
G11C
STATIC STORES
G11C
STATIC STORES
16/00
Erasable programmable read-only memories
16/00
Erasable programmable read-only memories
G11C16/02
electrically programmable
G11C16/02
electrically programmable
G11C16/06
Auxiliary circuits, e.g. for writing into memory
G11C16/06
Auxiliary circuits, e.g. for writing into memory
G11C16/34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C16/34
Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C16/349
Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
G11C16/349
Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
G11C16/3495
Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
G11C16/3495
Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically