Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; ; characterised by the concentration or distribution of impurities within semiconductor regions
specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
