H
ELECTRICITY
H
ELECTRICITY
H01
ELECTRIC ELEMENTS
H01
ELECTRIC ELEMENTS
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
H01L29/66007
Multistep manufacturing processes
H01L29/66007
Multistep manufacturing processes
H01L29/66075
of devices having semiconductor bodies comprising group 14 or group 13/15 materials
H01L29/66075
of devices having semiconductor bodies comprising group 14 or group 13/15 materials
H01L29/66083
the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
H01L29/66083
the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
H01L29/6609
Diodes
H01L29/6609
Diodes
H01L29/66098
Breakdown diodes
H01L29/66098
Breakdown diodes
H01L29/66106
Zener diodes
H01L29/66106
Zener diodes