Method of identifying defects in crystals

Abstract

A method of identifying defects in crystals includes the following steps. A silicon carbide crystal to be identified for defects is sliced to obtain a test piece. An etching process is performed on the test piece. Etching conditions of the etching process includes the following. An etchant including potassium hydroxide is used, and etching is performed at a temperature of 400 C. to 550 C. in an environment where dry air or oxygen is introduced, so as to form etching pits of threading edge dislocations (TED) and threading screw dislocations (TSD) in the test piece. After the etching process is performed, a diameter ratio (TED/TSD) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) observed by an optical microscope in the test piece is in a range of 0.2 to 0.5.

Claims

1. A method of identifying defects in crystals, comprising: slicing a silicon carbide crystal to be identified for defects to obtain a test piece; performing an etching process on the test piece, wherein etching conditions of the etching process comprise: using an etchant comprising potassium hydroxide (KOH), and performing etching at a temperature of 400 C. to 550 C. in an environment where dry air or oxygen is introduced to form etching pits of threading edge dislocations (TED) and threading screw dislocations (TSD) in the test piece, wherein after the etching process is performed, a diameter ratio (TED/TSD) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) observed by an optical microscope in the test piece is in a range of 0.2 to 0.5.

2. The method according to claim 1, wherein the etchant comprising potassium hydroxide is selected from 100% of potassium hydroxide, 10% of sodium peroxide (Na.sub.2O.sub.2) and 90% of potassium hydroxide, or 50% of sodium hydroxide (NaOH) and 50% of potassium hydroxide.

3. The method according to claim 1, wherein the etching is performed at a temperature of 450 C. to 500 C. in the environment where the dry air is introduced.

4. The method according to claim 1, wherein the etching is performed at a temperature of 400 C. to 460 C. in the environment where the oxygen is introduced.

5. The method according to claim 4, wherein the etching is performed at a temperature of 450 C. to 460 C. in the environment where the oxygen is introduced.

6. The method according to claim 1, wherein after the etching process, the etching pits of the threading screw dislocations (TSD) observed by the optical microscope in the test piece have a hexagonal morphology, and an included angle between edges of the hexagon is in a range of 115 to 125.

7. The method according to claim 1, wherein after the etching process, the etching pits of the threading edge dislocations (TED) observed by the optical microscope in the test piece have a circular morphology.

8. The method according to claim 1, wherein after the etching process, a diameter of the etching pits of the threading screw dislocations (TSD) observed by the optical microscope in the test piece is in a range of 50 m and 200 m.

9. The method according to claim 1, wherein after the etching process, a diameter of the etching pits of the threading edge dislocations (TED) observed by the optical microscope in the test piece is in a range of 20 m and 75 m.

10. The method according to claim 1, wherein the etching process further comprises performing the etching at a heating rate of 10 C./min and an etching time of 5 to 10 minutes, and an oxygen flow rate of the dry air or the oxygen is 20 sccm.

11. The method according to claim 1, wherein after the etching process is performed, a relative ratio (BPD/TSD) of diameters of etching pits of basal plane dislocations (BPD) and the threading screw dislocations (TSD) observed by the optical microscope in the test piece is in a range of 0.17 to 0.36.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a flowchart of a method of identifying defects in crystals according to an embodiment of the disclosure.

(2) FIG. 2 is a schematic flowchart of a method of identifying defects in crystals according to an embodiment of the disclosure.

DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS

(3) FIG. 1 is a flowchart of a method of identifying defects in crystals according to an embodiment of the disclosure. FIG. 2 is a schematic flowchart of a method of identifying defects in crystals according to an embodiment of the disclosure. Hereinafter, the method of identifying the defects in the crystals according to the embodiment of the disclosure will be described with reference to FIGS. 1 and 2.

(4) Referring to step S10 in FIG. 1 and FIG. 2, in the method of identifying the defects in the crystals according to the embodiment of the disclosure, a silicon carbide crystal 102 to be identified for defects is sliced to obtain a test piece 102A.

(5) Next, referring to step S20 in FIG. 1 and FIG. 2, an etching process is performed on the test piece 102A. In some embodiments, the etching process includes the following. The test piece 102A is placed into a nickel crucible 106, and an etchant 104 is added. In some embodiments, an etchant including potassium hydroxide (KOH) is used for the etchant 104. For example, the etchant 104 is selected from one of 100% of potassium hydroxide, 10% of sodium peroxide (Na.sub.2O.sub.2) and 90% of potassium hydroxide, and 50% of sodium hydroxide (NaOH) and 50% of potassium hydroxide. After the etchant 104 is added to the nickel crucible 106, a vent tube 108 is used to introduce dry air or oxygen.

(6) In some embodiments, etching is performed at a temperature of 400 C. to 550 C. in an environment where dry air or oxygen is introduced, and for example, steps of heating and etching are performed in a heating furnace 110. In some embodiments, the etching is performed at a temperature of 450 C. to 500 C. in the environment where the dry air is introduced. In some embodiments, the etching is performed at a temperature of 400 C. to 460 C. in the environment where the oxygen is introduced. In a specific embodiment, when oxygen is introduced, the etching is performed at a temperature of 450 C. to 460 C. In addition, the above etching process further includes the following. The etching is performed at a heating rate of 10 C./min and an etching time of 5 to 10 minutes, and an oxygen flow rate when the dry air or oxygen is introduced is 20 sccm. In some embodiments, the above etching process is performed to form etching pits of threading edge dislocations (TED), threading screw dislocations (TSD), and basal plane dislocations (BPD) in the test piece 102A.

(7) In embodiments of the disclosure, if the etching process is performed under the above etching conditions in the environment where the dry air or oxygen is introduced, it may further cause differences in morphologies of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD), increasing an identification rate of the two. If the dry air or oxygen is not introduced when the etching process is performed, for example, when the etching is performed in an atmospheric environment, the identification rate between the threading screw dislocations (TSD) and the threading edge dislocations (TED) is not high.

(8) Next, referring to step S30 in FIG. 1 and FIG. 2, after the etching process is performed, the through-edge dislocations (TED), a diameter of the etching pits of the threading edge dislocations (TED), the threading screw dislocations (TSD), and the basal plane dislocations (BPD) in the test piece 102A is observed by an optical microscope. For example, after the etching process, the etching pits of the threading screw dislocations (TSD) observed by the optical microscope in the test piece 102A have a hexagonal morphology and have a diameter D1, and an included angle between edges of the hexagon is in a range of 115 to 125. After the etching process, the etching pits of the threading edge dislocations (TED) observed by the optical microscope in the test piece 102A have a circular morphology and have a diameter D2. In addition, after the etching process, the etching pits of the basal plane dislocations (BPD) observed by the optical microscope in the test piece 102A have an elliptical morphology and have a diameter D3 (a short-side diameter).

(9) Through the method in the embodiment of the disclosure, a diameter ratio (TED/TSD; D2/D1) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) observed by the optical microscope in the test piece 102A is in a range of 0.2 to 0.5. In some embodiments, the diameter ratio (TED/TSD; D2/D1) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) observed by the optical microscope in the test piece 102A is in a range of 0.2 to 0.35. In addition, a relative ratio (BPD/TSD; D3/D1) of the diameters of the etching pits of the basal plane dislocations (BPD) and the threading screw dislocations (TSD) observed by the optical microscope in the test piece 102A is in a range of 0.17 to 0.36. In some embodiments, the diameter of the etching pits of the threading screw dislocations (TSD) observed by the optical microscope is in a range of 50 m to 200 m. In some embodiments, the diameter the etch pits of the threading edge dislocations (TED) observed by the optical microscope is in a range of 20 m to 75 m.

(10) Accordingly, through the method in the embodiment of the disclosure, when a diameter size and ratio of the etching pits of the threading edge dislocations (TED), the threading screw dislocations (TSD), and the basal plane dislocations (BPD) are in the above range, the differences in the morphologies of the three etching defects in the silicon carbide crystals are more obvious. Therefore, the identification rate of the threading screw dislocations (TSD), the threading edge dislocations (TED), and the basal plane dislocations (BPD) may be improved.

Example

(11) In order to prove that the method of identifying the defects in the crystals in the disclosure may effectively increase the identification rate of the three etching defects in the silicon carbide crystals, the following examples are particularly used for description.

(12) In this example, as shown in the above steps in FIGS. 1 and 2, in the environment where 20 sccm of the dry air (experimental groups A1 to A3) or oxygen (experimental group B1 to B3) was introduced, or in the atmospheric environment (control groups C1 to C3), the etching process was performed under the etching conditions recorded in Table 1. Results of (i) the diameter of the threading screw dislocations (TSD), (ii) the diameter ratio (TED/TSD) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD), and (iii) the diameter ratio (BPD/TSD) of etching pits of the basal plane dislocations (BPD) and the threading screw dislocations (TSD) were shown in Table 1.

(13) TABLE-US-00001 TABLE 1 Etching Oxygen Changes in Oxygen time flow rate oxygen Content Atmosphere TSD TED/TSD BPD/TSD Group (min) (sccm) flow rate Etchant (%) Environment Diameter diameter diameter Control group C1 10 0 None KOH 100% ~21% Atmosphere of 20 0.86 0.43 600 C. Experimental 10 20 sccm Continuous KOH 100% 20% Dry air of 500 C. 90 0.48 0.36 group A1 Experimental 10 20 sccm Continuous KOH 100% 100% Oxygen of 450 C. 75 0.31 0.25 group B1 Control group C2 20 0 None Na.sub.2O.sub.2/KOH ~21% Atmosphere of 128 0.88 0.21 (10%/90%) 600 C. Experimental 10 20 sccm Continuous Na.sub.2O.sub.2/KOH 20% Dry air of 450 C. 70 0.31 0.23 group A2 (10%/90%) Experimental 5 20 sccm Continuous Na.sub.2O.sub.2/KOH 100% Oxygen of 460 C. 128 0.25 0.17 group B2 (10%/90%) Control group C3 10 0 None NaOH/KOH ~21% Atmosphere of 40 0.6 0.6 (50%/50%) 550 C. Experimental 10 20 sccm Continuous NaOH/KOH 20% Dry air of 450 C. 61 0.35 0.26 group A3 (50%/50%) Experimental 10 20 sccm Continuous NaOH/KOH 100% Oxygen of 460 C. 75 0.29 0.21 group B3 (50%/50%)

(14) In the experimental examples of the disclosure, when the etching was performed in the atmospheric environment, if an etching temperature was lower than 550 C. the differences in the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) may not be effectively identified, and the included angle between the edges of the hexagon of the etching pits of the threading screw dislocations (TSD) was not in the range of 115 to 125. Accordingly, in the experimental examples of the disclosure, when the etching was performed in the atmospheric environment, the etching process was performed at a temperature of 550 C. to 600 C. as a control group.

(15) As shown in Table 1, when the etching was performed in the atmospheric environment (the control groups C1 to C3), the diameter ratio (TED/TSD) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) was in a range of 0.6 to 0.88, and the diameter ratio (BPD/TSD) of the etching pits of the basal plane dislocations (BPD) and the threading screw dislocations (TSD) was in a range of 0.21 to 0.6. That is to say, the differences in the morphologies of the threading screw dislocations (TSD) and the basal plane dislocations (BPD) may be identified through the conventional etching method performed in the atmospheric environment. However, since the diameter ratio (TED/TSD) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) is close to 1 (that is, the diameters of the two are equal), it is sometimes easy to cause misjudgment of the etching defects in the morphologies.

(16) In comparison, if the etching was performed in the environment with the dry air and at a lower etching temperature (450 C. to 500 C.), the diameter ratio (TED/TSD) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) may be reduced to a range of 0.31 to 0.48, and the diameter ratio (BPD/TSD) of the etching pits of the basal plane dislocations (BPD) and the threading screw dislocations (TSD) may be controlled in a range of 0.23 to 0.36. In other words, the above etching conditions may make the differences in the morphologies of the threading edge dislocations (TED), the threading screw dislocations (TSD), and the basal plane dislocations (BPD) more obvious, increasing the identification rate of the three etching defects in the silicon carbide crystals. In addition, according to the experimental results, in the environment with the dry air, when the etching was performed with an etchant with 10% of sodium peroxide (Na.sub.2O.sub.2) and 90% of potassium hydroxide (the experimental group A2) or an etchant with 50% of sodium hydroxide (NaOH) and 50% of potassium hydroxide (the experimental group A3), compared to using 100% of potassium hydroxide, the difference in the diameter ratio (TED/TSD) of the etching pits may be further reduced, so that the identification rate of the three etching defects in the silicon carbide crystals is higher.

(17) In addition, if the etching was performed in the environment where the oxygen was introduced and at a lower etching temperature (450 C. to 460 C.), the diameter ratio (TED/TSD) of the etching pits of the threading edge dislocations (TED) and the threading screw dislocations (TSD) may be reduced to a range of 0.25 to 0.31, and the diameter ratio (BPD/TSD) of the etching pits of the basal plane dislocations (BPD) and the threading screw dislocations (TSD) may be controlled in a range of 0.17 to 0.25. In other words, the above etching conditions may make the differences in the morphologies of the threading edge dislocations (TED), the threading screw dislocations (TSD), and the basal plane dislocations (BPD) more obvious, increasing the identification rate of the three etching defects in the silicon carbide crystals. In addition, according to the experimental results, in the environment where the oxygen was introduced, when the etching was performed with the etchant with 10% of sodium peroxide (Na.sub.2O.sub.2) and 90% of potassium hydroxide (the experimental group B2) or the etchant with 50% of sodium hydroxide (NaOH) and 50% of potassium hydroxide (the experimental group B3), compared to using 100% of potassium hydroxide, the difference in the diameter ratio (TED/TSD) of the etching pits may be further reduced, so that the identification rate of the three etching defects in the silicon carbide crystals is higher. In addition, when the etching was performed in the environment where the oxygen was introduced, compared to the etching performed in the environment with the dry air, the difference in the diameter ratio (TED/TSD) of the etching pits may also be further reduced, so that the identification rate of the three etching defects in the silicon carbide crystals is higher.

(18) Based on the above, in the method of identifying the defects in the crystals according to the embodiment of the disclosure, through the difference in etching rates between different surfaces, the difference in the morphologies of the three etching defects in the silicon carbide crystals may become more obvious. Therefore, the identification rate of the threading screw dislocations (TSD), the threading edge dislocations (TED), and the basal plane dislocations (BPD) may be improved.